Fig. 6From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationPlot of μeff versus Qinv for Ge pMOSFETs with 0.9 nm tSi on (001)-, (011)-, and (111)-oriented substrates. Ge(001) pMOSFETs achieve the 2.97 times enhancement in μeff at a Qinv of 3.5 × 1012 cm−2 as compared to the Si universal mobility. The μeff was extracted using a total resistance slope-based method [17]Back to article page