Fig. 1From: High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Terminationa XRD rocking curve and b AFM image of the β-Ga2O3 drift layer mechanically exfoliated from (100) β-Ga2O3 substrate c measured sheet resistance of 10 mm × 10 mm β-Ga2O3 substrateBack to article page