Fig. 3From: Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layera Numerical BV as a function of Nnb with different Npwell. b Current density profile for Nnb = 10.5 × 1016 cm−3 and 14.5 × 1016 cm−3 while Npwell = 2 × 1017 cm−3 at breakdownBack to article page