Fig. 4From: Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layera BV as a function of ΔLpb with different Npb. The insert is the equipotential contour profile with Npb = 1 × 1017 cm−3. b Electric field distribution at the surface and the P-buried/N-drift junction interfaceBack to article page