Fig. 3
From: Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
TEM and elemental mapping of GaN nanowires grown on ITO layer. a HAADF image of GaN nanowires directly grown on top of the ITO layer. The red box indicates where the EELS line scan was performed. b EELS line scan profile of the interface between the base of GaN nanowire and ITO layer. The elemental mapping for Ga, In, N, and O are shown in the graph. c High-resolution TEM of the GaN nanowire, showing single crystallinity. The red arrow indicates growth direction. The interplane spacing corresponds to GaN c-plane. d High-resolution TEM image of the interface between the GaN nanowire and ITO layer. A partially amorphous intermediate layer (IL) can be seen between the GaN nanowires and ITO layer, bound by the dashed red lines