Fig. 5From: Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silicaa C-AFM mapping of the nanowires topology. b Corresponding tip current, with -8V bias applied to the sample. c I-V curve of a single nanowire with sample voltage bias from -10 V to 10 V, showing different I-V characteristic between initial and second sweep. d Distribution of I-V curve from a number of nanowires, after the initial punch-through sweepBack to article page