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Table 1 The main parameters of the PEALD process

From: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Growth parameter Range
Process temperature (°C) 90
Plasma power (W) 50–300
BTBAS pulse time (s) 0.05–0.5
BTBAS purge time (s) 0.5–3
CO2 plasma exposure time (s) 1–15
CO2 plasma purge time (s) 0.5–3