Table 1 The main parameters of the PEALD process
From: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
Growth parameter | Range |
|---|---|
Process temperature (°C) | 90 |
Plasma power (W) | 50–300 |
BTBAS pulse time (s) | 0.05–0.5 |
BTBAS purge time (s) | 0.5–3 |
CO2 plasma exposure time (s) | 1–15 |
CO2 plasma purge time (s) | 0.5–3 |