Table 1 The element percentage in the Co films deposited at 175 °C with different etching time
From: Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
175 °C | Co | C | N | O |
|---|---|---|---|---|
Surface | 10% | 54% | 6% | 30% |
4 min etching | 46% | 30% | 19% | 5% |
6 min etching | 45% | 32% | 18% | 5% |