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Table 3 The performance comparison of the Co films grown by different precursors

From: Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)₂ as a Metal Precursor

Precursors	Reactant gas	GPC (Å)	Process window (°C)	Resistivity (μΩ cm)	Ref.
CoCp₂	NH₃ plasma	0.48	250–400	< 20 @300 °C	[11]
Co(MeCp)₂	NH₃ plasma	0.4–0.6	200–350	30–400	[15]
Co(EtCp)₂	NH₃ plasma	0.12	125–225	129–158	This work

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