Fig. 4From: Temperature-Dependent HfO2/Si Interface Structural Evolution and its MechanismCross-sectional TEM images of a as-deposited, b 400 °C-annealed, c 450 °C-annealed, d 500 °C-annealed, e 550 °C-annealed, and f 600 °C-annealed HfO2/SiBack to article page