Fig. 5From: Temperature-Dependent HfO2/Si Interface Structural Evolution and its MechanismDiagrams of mechanism of crystallization of HfO2 films and interfacial layer in the temperature ranges a as-deposited to 400 °C, b 450 to 550 °C, and c beyond 550 °C. The d-spacing value and crystalline orientation are also indicatedBack to article page