Table 1 Structural parameters of InGaN/GaN MQWs of samples A and B determined by HRXRD
Samples | Cap layer growth time (s) | Period thickness (nm) | Barrier thickness (nm) | Well thickness (nm) | In content in InGaN |
|---|---|---|---|---|---|
A | 30 | 19.10 | 14.85 | 4.25 | 10.0% |
B | 200 | 19.95 | 15.50 | 4.45 | 10.3% |