Fig. 3
From: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2
Measured P-V curves of the Hf1-xZrxO2 films with different Zr compositions annealed at 500 and 550 oC. (a) and (b) are the Hf0.67Zr0.33O2 film annealed at 500 and 550 oC, respectively. (c) and (d) are the Hf0.52Zr0.48O2 film annealed at 500 and 550 oC, respectively. (e) and (f) are the Hf0.33Zr0.67O2 film annealed at 500 and 550 oC, respectively. With the post annealing temperature increases from 500 to 550 oC, the P-V curves of the Hf1-xZrxO2 tend to be saturated in a sub-loop state. An evolution ferroelectric to an antiferroelectric-like behavior is observed with the Zr composition increased