Fig. 6From: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2(a) Measured IDS-VGS of the Hf0.67Zr0.33O2 NC Ge pFETs annealed at 450 °C, 500 °C, and 550 °C. (b) Point SS vs. IDS characteristics of the devices. (c) IDS for the ferroelectric NC transistors with different annealing temperatures at a gate overdrive of 1 VBack to article page