Fig. 2From: Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticitya Resistive switching characteristics of HZO-based device measured by DC sweep. b Distribution of the set and reset voltages extracted from DC sweep cycles in flexible device. c Statistical data of HRS and LRS, where resistance were measured at a read voltage of 0.1 VBack to article page