Fig. 3From: Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticitya Gradual conductance modulation for LTP and LTD in the artificial flexible synapse, where the post-synaptic current was obtained at a read voltage of 0.1 V. b Forgetting behaviors after 100 consecutive programing pulses (1 V, 50 ms) and fitted curves of the electrical synapseBack to article page