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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Fig. 6

The physical modeling for the switching behavior of the annealed and un-annealed devices. The a Set and b RESET process for the un-annealed device with the structure of Cu/Ta2O5/Ta/W. c Set and d RESET process for the annealed device with the structure of Cu/Ta2O5/TaOx/W. The filament overgrowth is suppressed by the TaOx layer formed during the annealing process

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