Fig. 2From: Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applicationsa XTEM image showing gate, channel, and source/drain regions of NEI-FeFET. b and c XTEM images of gate stack of FeFETs with 3.6- and 2.1-nm-thick NEI layers, respectivelyBack to article page