Fig. 3From: Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory ApplicationsHRTEM images showing nanocrystals embedded in amorphous Al2O3 for the samples with thicknesses of a 3.6 nm and b 6 nm. Insets show that the interplanar spacing d in the nanocrystal is 0.173 nm, corresponding to o-ZrO2(111) phaseBack to article page