Fig. 8
a IDS-VGS curves of an NEI NCFET and control MOSFET with pure Al2O3 dielectric. Both devices have the 2.1-nm gate insulator. The inset shows that the NCFET has steeper SS than control device up to the threshold voltage. b Measured IDS-VDS curves for NCFET and control MOSFET. NDR is observed for NCFET at very low VGS. At ∣VGS − VTH ∣ = ∣ VDS ∣ = 1.0 V, NCFET achieves a 16% IDS improvement compared to the control device