Fig. 9
a IDS-VGS of a NEI (3.6 nm) NCFET measured at 10 °C and 30 °C. The curves show a shift towards more negative voltage with increasing temperature, as expected. Inset shows steep point SS. b Statistical plots of hysteresis (left) and forward VGS @ 10−7 A/μm (right) for NCFETs with 3.6-nm NEI layer. Forward VGS shifts in the negative direction with increasing temperature