Fig. 1
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
a The structure of Pt/HfO2/TiOx/Pt device. b The fabrication process flow
Fig. 1 | Nanoscale Research Letters
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
a The structure of Pt/HfO2/TiOx/Pt device. b The fabrication process flow