Fig. 3From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access MemoryO 1s XPS scan spectra of TiOx films in S1, S2, and S3. Oxygen partial pressure was set as a 9%, b 11%, and c 13% during TiOx film sputtering processBack to article page