Fig. 6
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Cycle-to-cycle variation of RLRS and RHRS for 100 cycles in a S1, b S2, and c S3
Fig. 6 | Nanoscale Research Letters
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Cycle-to-cycle variation of RLRS and RHRS for 100 cycles in a S1, b S2, and c S3