Table 2 The device-to-device variation characteristic of three samples
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Sample | Average value(μ) (ohm) | Standard deviation(σ) (ohm) | Relative standard deviation(σ/μ) | |||
|---|---|---|---|---|---|---|
LRS | HRS | LRS | HRS | LRS | HRS | |
S1 | 3.20e6 | 6.28e8 | 2.99e6 | 9.96e8 | 0.94 | 1.59 |
S2 | 22.32 | 2.90e4 | 4.83 | 6.56e4 | 0.22 | 2.26 |
S3 | 22.09 | 7.61e3 | 3.67 | 1.20e4 | 0.17 | 1.58 |