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Table 2 The device-to-device variation characteristic of three samples

From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Sample Average value(μ) (ohm) Standard deviation(σ) (ohm) Relative standard deviation(σ/μ)
LRS HRS LRS HRS LRS HRS
S1 3.20e6 6.28e8 2.99e6 9.96e8 0.94 1.59
S2 22.32 2.90e4 4.83 6.56e4 0.22 2.26
S3 22.09 7.61e3 3.67 1.20e4 0.17 1.58