Fig. 3From: Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidationa IDS–VGS and b IDS–VDS characteristics of Ge pMOSFETs with a Al2O3/GeO2 passivation layer fabricated by PPO (wafer A) and OPO (wafers B and C)Back to article page