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Table 2 Key device performance of Ge pMOSFETs in this work vs. other published results with OPO

From: Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation

  W/L (μm) EOT (nm) SS (mV/dec.) ION @ VDS = − 0.5 V
VGS − VTH = − 0.8 V (μA/μm)
ION/IOFF @ VDS = −  0.5 V μeff @ peak (cm2/V × S) μeff @ Qinv = 5 × 1012 cm−2 (cm2/V × S)
Ref. [9] −−/5 0.6 85 15.8 ~ 0.9 × 103 417 134
Ref. [14] 400/24 4.0 142 1.73 ~ 2.3 × 103 268 184
This work wafer C 100/3 2.1 144 11.2 ~ 4.8 × 103 283 222