Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation

Table 2 Key device performance of Ge pMOSFETs in this work vs. other published results with OPO

	W/L (μm)	EOT (nm)	SS (mV/dec.)	I_ON @ V_DS = − 0.5 V V_GS − V_TH = − 0.8 V (μA/μm)	I_ON/I_OFF @ V_DS = − 0.5 V	μ_eff @ peak (cm²/V × S)	μ_eff @ Q_inv = 5 × 10¹² cm⁻² (cm²/V × S)
Ref. [9]	−−/5	0.6	85	15.8	~ 0.9 × 10³	417	134
Ref. [14]	400/24	4.0	142	1.73	~ 2.3 × 10³	268	184
This work wafer C	100/3	2.1	144	11.2	~ 4.8 × 10³	283	222