Fig. 5From: On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned SubstrateThe schematic distribution of the electric field and depletion region in a the device without the SP, b the proposed SP-VFET with a short SP, and c the proposed SP-VFET with a long SPBack to article page