Fig. 4From: Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layera The switching (Psw) and nonswitching (Pnsw) polarizations versus V with d increased from 0 to 6 nm under pulses in type I mode. b The Al2O3-layer-thickness d dependence of 1/Ctot measured by an impedance analyzer at 100 kHzBack to article page