Skip to main content
Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes

Fig. 5

a Schematic side view diagram for flip-chip DUV LED with hybrid p-GaN/p-AlGaN nanorod-based meshed contacts. b LEEs for TE-polarized light as a function of the nanorod spacing and the p-AlGaN nanorod heights are set to 0, 25, 75, and 100 nm. Inset: Reflectivity of normal incidence for DUV LED with the 100-nm-high p-GaN and with the p-AlGaN height of 0, 25, 75, and 100 nm as a function of the nanorod spacing. Far-field radiation patterns at a spacing of 125 nm with p-AlGaN height of c 75 nm and d 0 nm. e LEEs for TM-polarized light as a function of the nanorod spacing and the p-AlGaN nanorod heights are set to 0, 25, 75, and 100 nm

Back to article page