Skip to main content
Account

Table 2 Five locations of initial I-V transfer characteristics for the CL-ES- and the BCE-structured GOA TFTs

From: Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

No.

CL-ES-structured GOA TFT

BCE-structured GOA TFT

Ion (μA)

Vth (V)

Mobility (cm2/V s)

SS (V/dec)

Ion (μA)

Vth (V)

Mobility (cm2/V s)

SS (V/dec)

#1

133.1

0

7.2

0.09

61.9

4

9.1

0.46

#2

138.6

− 0.4

7.4

0.08

72.8

3.2

9.3

0.42

#3

128.2

0.4

7.1

0.13

74.2

3.8

9.4

0.42

#4

135.8

− 0.4

7.3

0.14

66.6

4.2

9

0.49

#5

122.8

0.5

7.2

0.12

57.5

4.8

9

0.51

Average values

131.7

0.02

7.24

0.112

66.6

4

9.16

0.46

Standard deviations

6.2817

0.4266

0.1020

0.0259

7.0905

0.5215

0.1817

0.0406

Navigation