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Table 2 Five locations of initial I-V transfer characteristics for the CL-ES- and the BCE-structured GOA TFTs

From: Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

No. CL-ES-structured GOA TFT BCE-structured GOA TFT
Ion (μA) Vth (V) Mobility (cm2/V s) SS (V/dec) Ion (μA) Vth (V) Mobility (cm2/V s) SS (V/dec)
#1 133.1 0 7.2 0.09 61.9 4 9.1 0.46
#2 138.6 − 0.4 7.4 0.08 72.8 3.2 9.3 0.42
#3 128.2 0.4 7.1 0.13 74.2 3.8 9.4 0.42
#4 135.8 − 0.4 7.3 0.14 66.6 4.2 9 0.49
#5 122.8 0.5 7.2 0.12 57.5 4.8 9 0.51
Average values 131.7 0.02 7.24 0.112 66.6 4 9.16 0.46
Standard deviations 6.2817 0.4266 0.1020 0.0259 7.0905 0.5215 0.1817 0.0406