Fig. 3
From: Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
Te-doping influence on the crystal structure. TEM images depicting the crystal structure in undoped and Te-doped InAs NWs. a Side view of an InAs NW. b–d HR-TEM images of the InAs NW crystal structure (image turned 90° clockwise). The WZ and ZB areas are labeled. The following samples and GaTe-cell temperatures were chosen: b B1 (As4-BEP = 2.3 × 10−5 Torr), undoped, i.e., 0 °C. c B3 (As4-BEP = 2.3 × 10−5 Torr), 447 °C. d C1 (As4-BEP = 3.0 × 10−5 Torr), 500 °C