Fig. 5
From: Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
X-ray analysis of the lattice structure. a φ scans obtained via X-ray measurements on InAs NWs A1-A4. b Resulting IZB/(IWZ + IZB) intensity ratio vs. GaTe-cell temperature. The triangular data points are extracted from the measurements depicted in (a) for samples A1–A4. The black dots indicate the data points of samples B1–B4