Table 1 As4-BEP and GaTe-cell doping temperature of the samples used for analysis
From: Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
Sample | As4-BEP [10−5 Torr] | GaTe temp. [°C] |
|---|---|---|
A1 | 3.3 | 0 |
B1 | 2.3 | 0 |
A2 | 3.3 | 401 |
B2 | 2.3 | 401 |
A3 | 3.3 | 447 |
B3 | 2.3 | 447 |
B4 | 2.3 | 462 |
A4 | 3.3 | 500 |
C1 | 3.0 | 500 |
A5 | 3.3 | 561 |