Fig. 3From: High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealinga Measured ID, IS, and IG vs. VGS curves of Ge pMOSFETs on wafer I with the PMA at 350, 400, 450, and 500 °C. b IDS-VDS curves measured at the different VGS-VTH for the devices. c Device annealed at 500 °C has a higher on-state current ION compared to the transistors with the PMA at the lower temperaturesBack to article page