Fig. 7From: High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealinga ID, IS, and IG vs. VGS curves of Ge pMOSFETs on wafer I and II with PMA at 400 °C. b IDS-VDS curves measured at different VGS-VTH for the devicesBack to article page