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Table 1 Conduction band barrier heights of each NPN-AlGaN junction for LEDs Ci (i = 1, 2, 3, 4, and 5)

From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

LEDs

C1

C2

C3

C4

C5

φ1 (eV)

0.230

0.252

0.254

0.257

0.258

φ2 (eV)

0.236

0.251

0.254

0.256

0.258

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