Account

Table 4 Conduction band barrier heights of each NPN-AlGaN junction for LEDs Ni (i = 1, 2, 3, 4, and 5)

From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

LEDs	N1	N2	N3	N4	N5
φ₁ (eV)	0.209	0.210	0.210	0.212	0.213
φ₂ (eV)	–	0.214	0.214	0.214	0.214
φ₃ (eV)	–	–	0.214	0.214	0.214
φ₄ (eV)	–	–	–	0.214	0.214
φ₅ (eV)	–	–	–	–	0.214

Back to article page