Fig. 1
From: Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization
The growth optimization of monolayer WSe2 on sapphire substrate. a Optical and b the corresponding AFM images of triangular monolayer WSe2 grown at 920 °C. c The average domain size and integrated PL intensity. d Raman spectra. e The E12g frequency and intensity together with f FWHM of E12g peak for monolayer WSe2 grown from 860 °C to 940 °C. All the Raman and PL spectra were taken from the similar region from the triangle monolayer WSe2, as pointed out by a red point in a