Fig. 2From: Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth OptimizationPL integral (range 725–785 nm) mapping of the monolayer WSe2 grown under different temperatures together with the corresponding optical images. a, d 900 °C. b, e 920 °C. c, f 940 °C. The inset in a is an atomic illustration of the WSe2 layer showing the armchair direction. The excitation power for the PL mapping is 50 μWBack to article page