Fig. 4
From: Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization
The direct correlation between crystal stability and lattice defect of of WSe2. PL mapping of WSe2 monolayer grown at a 900 °C, b 920 °C, and c 940 °C, respectively, after placing in the air for 90 days. Optical images of WSe2 grown at 900 °C d before and e after 90 days. f Raman and g PL spectra comparison from the center and the edge of the WSe2 sample grown at 900 °C before and after 90 days. The excitation power for PL measurements is 50 μW