Fig. 4From: Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistorsa W and b Se peaks in XPS spectra of WSe2 before and after annealing in ambient at 250 °C for 1 h and 5 h. c Schematics of the structural changes in the WSe2 caused by thermal annealing in ambientBack to article page