Table 1 Fabrication details of electrical contacts used for transport characterization of Be-doped GaAs NWs
Process# | Oxygen plasma | Oxide removal | Surface passivation | Metal layers | RTA |
|---|---|---|---|---|---|
P1 | – | NH4OH:H2O | – | Ti/Pt/Au | – |
P2 | Yes | HCl:H2O | (NH4)2Sx | Ti/Pt/Au | – |
P3 | – | HCl:H2O | (NH4)2Sx | Ti/Pt/Au | – |
P4 | – | HCl:H2O | (NH4)2Sx | Pt/Ti/Pt/Au | – |
P5 | – | HCl:H2O | (NH4)2Sx | Pt/Ti/Pt/Au | 400 °C, 30 s |