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Table 1 Fabrication details of electrical contacts used for transport characterization of Be-doped GaAs NWs

From: Optimization of Ohmic Contacts to p-GaAs Nanowires

Process#Oxygen plasmaOxide removalSurface passivationMetal layersRTA
P1NH4OH:H2OTi/Pt/Au
P2YesHCl:H2O(NH4)2SxTi/Pt/Au
P3HCl:H2O(NH4)2SxTi/Pt/Au
P4HCl:H2O(NH4)2SxPt/Ti/Pt/Au
P5HCl:H2O(NH4)2SxPt/Ti/Pt/Au400 °C, 30 s