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Table 2 Growth parameters of the standard sample using pre-growth conditions 2

From: Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

Growth temperature

450 °C

V/III precursor flow rate ratio (in vapour phase)

309

TMIn flow rate for the nanowire growth

1.62 × 10−5 mol/min

Nanowire growth time

30 min

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