Table 2 Growth parameters of the standard sample using pre-growth conditions 2
Growth temperature | 450 °C |
V/III precursor flow rate ratio (in vapour phase) | 309 |
TMIn flow rate for the nanowire growth | 1.62 × 10−5 mol/min |
Nanowire growth time | 30 min |
Growth temperature | 450 °C |
V/III precursor flow rate ratio (in vapour phase) | 309 |
TMIn flow rate for the nanowire growth | 1.62 × 10−5 mol/min |
Nanowire growth time | 30 min |