Skip to main content

Table 1 Crystalline quality characterization of AlN and n-type AlGaN layers of samples A, B, C, and D by high-resolution X-ray diffraction along symmetric (002) plane and asymmetric (102) plane. Threading dislocation density (TDD) was calculated according to ref. [27]

From: Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

SampleFWHMTDD
AlN-(002) (arcsec)AlN-(102) (arcsec)AlGaN-(002) (arcsec)AlGaN-(102) (arcsec)AlN (cm−3)AlGaN (cm−3)
A3563453714028.87 × 1081.33 × 109
B3523433683978.83 × 1081.30 × 109
C3573443744058.76 × 1081.35 × 109
D3503393733968.56 × 1081.27 × 109