Table 1 Crystalline quality characterization of AlN and n-type AlGaN layers of samples A, B, C, and D by high-resolution X-ray diffraction along symmetric (002) plane and asymmetric (102) plane. Threading dislocation density (TDD) was calculated according to ref. [27]
Sample | FWHM | TDD | ||||
|---|---|---|---|---|---|---|
AlN-(002) (arcsec) | AlN-(102) (arcsec) | AlGaN-(002) (arcsec) | AlGaN-(102) (arcsec) | AlN (cm−3) | AlGaN (cm−3) | |
A | 356 | 345 | 371 | 402 | 8.87 × 108 | 1.33 × 109 |
B | 352 | 343 | 368 | 397 | 8.83 × 108 | 1.30 × 109 |
C | 357 | 344 | 374 | 405 | 8.76 × 108 | 1.35 × 109 |
D | 350 | 339 | 373 | 396 | 8.56 × 108 | 1.27 × 109 |