Fig. 8From: Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping LayerEnergy band diagrams of the a-IGZO TFT memory devices programmed at a a positive gate bias and b a negative gate bias, respectively. Vo, Vo+, and Vo2+ denote neutral oxygen vacancy, singly ionized oxygen vacancy, and doubly ionized oxygen vacancy, respectivelyBack to article page