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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Fig. 1

a Schematic cross-sectional structure (not drawn in scale), b schematic energy band diagram under reverse bias for standard 4H-SiC SACM APD, c calculated current-voltage characteristics and the multiplication gain, and d calculated spectral response characteristics at the reverse voltage of 10 V for standard 4H-SiC SACM APD. Inset figure in c shows the measured current-voltage characteristics and the multiplication gain. Inset figure in d shows measured spectral response characteristics for standard 4H-SiC SACM APD biased at − 10 V

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