Fig. 9From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection EfficiencyEnergy band diagrams for a device C1 and b device C4, c hole concentration profiles for device C1 and C4. Data are calculated at the reverse voltage of 100 V. Insets for a and b show the local energy band diagrams for multiplication layer/charge control layer for devices C1 and C4, respectivelyBack to article page