Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Table 2 Structural parameters for the absorption layer of the investigated devices

Structural information for the absorption layer
Device number	Doping type, doping concentration, thickness	Device number	Doping type, doping concentration, thickness
Device M1	N⁻, 1 × 10¹⁵ cm⁻³, 0.2 μm	Device B1	N⁻, 5 × 10¹⁴ cm⁻³, 0.5 μm
Device M2	N⁻, 1 × 10¹⁵ cm⁻³, 0.4 μm	Reference device	N⁻, 1 × 10¹⁵ cm⁻³, 0.5 μm
Reference device	N⁻, 1 × 10¹⁵ cm⁻³, 0.5 μm	Device B2	N⁻, 5 × 10¹⁵ cm⁻³, 0.5 μm
Device M3	N⁻, 1 × 10¹⁵ cm⁻³, 0.6 μm	Device B3	N⁻, 1 × 10¹⁶ cm⁻³, 0.5 μm
Device M4	N⁻, 1 × 10¹⁵ cm⁻³, 0.8 μm	Device B4	N⁻, 5 × 10¹⁶ cm⁻³, 0.5 μm