Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Table 4 Structural parameters for the multiplication layer for the investigated devices

Structural information for the multiplication layer
Device number	Doping type, doping concentration, thickness	Device number	Doping type, doping concentration, thickness
Device P1	N⁻, 1 × 10¹⁵ cm⁻³, 0.3 μm	Device D1	N⁻, 5 × 10¹⁴ cm⁻³, 0.5 μm
Device P2	N⁻, 1 × 10¹⁵ cm⁻³, 0.4 μm	Reference device	N⁻, 1 × 10¹⁵ cm⁻³, 0.5 μm
Reference device	N⁻, 1 × 10¹⁵ cm⁻³, 0.5 μm	Device D2	N⁻, 5 × 10¹⁵ cm⁻³, 0.5 μm
Device P3	N⁻, 1 × 10¹⁵ cm⁻³, 0.6 μm	Device D3	N⁻, 1 × 10¹⁶ cm⁻³, 0.5 μm
Device P4	N⁻, 1 × 10¹⁵ cm⁻³, 0.7 μm	Device D4	N⁻, 5 × 10¹⁶ cm⁻³, 0.5 μm